SPICE MODEL of SSM3K7002F (Professional+BDP Model) in SPICE PARK

SPICE MODEL of SSM3K7002F (Professional+BDP Model) in SPICE PARK. English

  1. Tsuyoshi Horigome
    SPICE MODEL of SSM3K7002F (Professional+BDP Model) in SPICE PARK. English
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    SPICE MODEL of SSM3K7002F (Professional+BDP Model) in SPICE PARK
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    • 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Professional Model)PART NUMBER: SSM3K7002FMANUFACTURER: TOSHIBABody Diode (Professional Model) / ESD Protection Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 2. MOSFET MODELPSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 3. Transconductance CharacteristicCircuit Simulation Result 500 Measurement 450 Simulation Transconductance GFS (ms) 400 350 300 250 200 150 100 50 0 0 50 100 150 200 Drain Current ID (mA)Comparison table Gfs (ms) ID (mA) Error (%) Measurement Simulation 1 28.200 28.973 2.74 2 40.700 40.973 0.67 5 64.200 64.773 0.89 10 91.300 91.580 0.31 20 130.000 129.466 -0.41 50 204.600 204.552 -0.02 100 290.000 289.036 -0.33 200 410.000 408.172 -0.45 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 4. Vgs-Id CharacteristicCircuit Simulation result 1.0A 100mA 10mA 1.0mA 0V 1.0V 2.0V 3.0V 4.0V I(V2) V_V1Evaluation circuit V2 0Vdc U1 SSM3K7002F Vv ariable V1 10Vdc 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 5. Comparison GraphCircuit Simulation Result 1000 Measurement Simulation Drain C urrent ID (mA) 100 10 1 0 1 2 3 4 Gate-Source Voltage VGS (V)Simulation Result VGS(V) ID (mA) Error (%) Measurement Simulation 1 1.510 1.556 3.01 2 1.560 1.584 1.54 5 1.640 1.641 0.05 10 1.718 1.705 -0.77 20 1.815 1.795 -1.09 50 2.000 1.975 -1.26 100 2.180 2.178 -0.11 200 2.440 2.464 0.99 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 6. Rds(on) CharacteristicCircuit Simulation result 500mA 400mA 300mA 200mA 100mA 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V I(Vsense) V_VDSEvaluation circuit V2 0Vdc U1 SSM3K7002F Vv ariable V1 10Vdc 10Vdc 0Simulation Result ID = 0.5A, VGS = 10V Measurement Simulation Error (%) R DS (on)  2.00 2.00 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 7. Gate Charge CharacteristicCircuit Simulation result 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0 0.4n 0.8n 1.2n 1.6n 2.0n 2.4n 2.8n 3.2n 3.6n V(W1:3) Time*1mSEvaluation circuit V2 0Vdc Dbreak U1 D1 SSM3K7002F I2 PER = 1000u W1 0.2Adc PW = 600u + TF = 10n TR = 10n - TD = 0 W I2 = 1m IOFF = 0.1mA V1 I1 = 0 I1 ION = 0uA 30Vds 0Simulation Result VDD=30V, ID=0.2A, Measurement Simulation Error (%) VGS=10V Qgs nC 0.220 0.230 4.55 Qgd nC 0.200 0.195 -2.50 Qg nC 1.480 1.485 0.34 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 8. Gate Charge Characteristic ReferenceMeasurement VGS-Qg 12 VDD=30V 10 8 VGS (V) 6 4 2 0 0 0.4 0.8 1.2 1.6 2 Qg (nC) All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 9. Capacitance Characteristic Measurement SimulationSimulation Result Cbd (pF) VDS (V) Error (%) Measurement Simulation 1 14.300 14.200 0.70 2 12.500 12.700 -1.57 5 9.200 9.250 -0.54 5 9.200 9.250 -0.54 10 6.200 6.250 -0.80 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 10. Switching Time CharacteristicCircuit Simulation result 12V 10V 8V 6V 4V 2V 0V -2V 0.97us 0.98us 0.99us 1.00us 1.01us 1.02us 1.03us 1.04us V(L3:1) V(L2:1)/3 TimeEvaluation circuit L2 30nH RL 150 R2 L3 U1 SSM3K7002F V1 = 0 50 30nH V2 = 20 V2 R3 VDD TD = 2u 50 30 TR = 5n TF = 5n PW = 10u PER = 100u 0Simulation Result ID=0.2A, VDD=30V Measurement Simulation Error (%) VGS=0/10V td(on) ns 2.400 2.479 3.29 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 11. Output CharacteristicCircuit Simulation result 1.0A 0.9A 10 0.8A 7 5 0.7A 4.5 4.0 0.6A 3.3 0.5A 3.0 0.4A 2.7 0.3A 2.5 0.2A 0.1A VGS=2.3V 0A 0V 0.5V 1.0V 1.5V 2.0V I(Vdsense) V_VvariableEvaluation circuit Vsense U1 SSM3K7002F VD 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 12. Forward Current CharacteristicCircuit Simulation result 1.0A 0.9A 0.8A 0.7A 0.6A 0.5A 0.4A 0.3A 0.2A 0.1A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(R1) V_V1Evaluation Circuit R1 0.01m U1 D3K7002F_PRO V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 13. Comparison GraphCircuit Simulation ResultSimulation Result VSD(V) IDR(mA) %Error Measurement Simulation 10 0.630 0.630 0.04 20 0.680 0.679 -0.21 50 0.745 0.748 0.34 100 0.810 0.807 -0.35 200 0.880 0.880 0.02 500 1.025 1.022 -0.34 800 1.130 1.133 0.27 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 14. Reverse Recovery CharacteristicsCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.96us 20.00us 20.04us 20.08us 20.12us 20.16us I(R1) TimeEvaluation Circuit R1 50 V1 = -9.5v U1 V1 V2 = 10.75v D3K7002F_PRO TD = 0.65u TR = 20ns TF = 20ns PW = 20us PER = 100us 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 19.20 19.19 -0.05 trb ns 11.60 11.47 -1.12 trr ns 30.80 30.66 -0.45 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 15. Reverse Recovery Characteristic ReferenceMeasurementtrj=19.20(ns)trb=11.60(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 16. Zener Voltage CharacteristicCircuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1Evaluation Circuit R1 0.01m U1 SSM3K7002F open open V1 Ropen 0Vdc 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
    • 17. Zener Voltage Characteristic ReferenceMeasurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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